2002. 10. 23 1/1 semiconductor technical data KTA1225D/l epitaxial planar pnp transistor revision no : 1 high voltage application. features high transition frequency : f t =100mhz(typ.). complementary to ktc2983d/l maximum rating (ta=25 ) dpak dim millimeters a b c d f h i j k l 6.60 0.2 6.10 0.2 5.0 0.2 1.10 0.2 2.70 0.2 2.30 0.1 1.00 max 2.30 0.2 0.5 0.1 2.00 0.20 0.50 0.10 e 0.91 0.10 m 0.90 0.1 o a c d b e k i j q h f f m o p l 123 1. base 2. collector 3. emitter 1.00 0.10 p 0.95 max q + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ electrical characteristics (ta=25 ) characteristic symbol rating unit collector-base voltage v cbo -160 v collector-emitter voltage v ceo -160 v emitter-base voltage v ebo -5 v collector current i c -1.5 a base current i b -0.3 a collector power dissipation ta=25 p c 1.3 w tc=25 10 junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-160v, i e =0 - - -1.0 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -1.0 a collector-emitter breakdown voltage v (br)ceo i c =-10ma, i b =0 -160 - - v emitter-base breakdown voltage v (br)ebo i e =-1ma, i c =0 -5.0 - - v dc current gain h fe (note) v ce =-5v, i c =-100ma 70 - 240 collector-emitter saturation voltage v ce(sat) i c =-500ma, i b =-50ma - - -1.5 v base-emitter voltage v be v ce =-5v, i c =-500ma - - -1.0 v transition frequency f t v ce =-10v, i c =-100ma - 100 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 30 - pf note : h fe classification o:70~140, y:120~240 dim millimeters ipak d b q e h f f c a p l i j 123 a b c d e f g h i j l p q 6.60 0.2 6.10 0.2 5.0 0.2 1.10 0.2 9.50 0.6 2.30 0.1 0.76 0.1 1.0 max 2.30 0.2 0.5 0.1 0.50 0.1 1.0 0.1 0.90 max g 1. base 2. collector 3. emitter k 2.0 0.2 k + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _
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